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M5M54R01J-12 Datasheet

Manufacturer: Mitsubishi Electric
M5M54R01J-12 datasheet preview

Datasheet Details

Part number M5M54R01J-12
Datasheet M5M54R01J-12_MitsubishiElectricSemiconductor.pdf
File Size 55.83 KB
Manufacturer Mitsubishi Electric
Description 4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
M5M54R01J-12 page 2 M5M54R01J-12 page 3

M5M54R01J-12 Overview

The M5M54R01J is a family of 4194304-word by 1-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. The M5M54R01J is offered in a 32-pin plastic small outline Jlead package(SOJ). These device operate on a single 5V supply, and are directly TTL patible.

M5M54R01J-12 Key Features

  • Fast access time M5M54R01J-12 ---- 12ns(max) M5M54R01J-15 ---- 15ns(max)
  • Low power dissipation Active ---------- 450mW(typ) Stand by ---------- 5mW(typ)
  • Single +5V power supply
  • Fully static operation : No clocks, No refresh
  • Test mode is available
  • Easy memory expansion by S
  • Three-state outputs : OR-tie capability
  • OE prevents data contention in the I/O bus
  • Directly TTL patible : All inputs and outputs
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