MGF1601B-01 Description
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
MGF1601B-01 Key Features
- High linear power gain Glp=8.0dB @f=8GHz
- High P1dB P1dB=21.8dBm(TYP.) @f=8GHz
- S to X Band medium-power amplifiers and oscillators
- VDS=6V,Id=100mA Refer to Bias Procedure