Datasheet Details
| Part number | MGF1601B-01 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 322.56 KB |
| Description | High-power GaAs FET |
| Download | MGF1601B-01 Download (PDF) |
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Overview: < High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.
| Part number | MGF1601B-01 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 322.56 KB |
| Description | High-power GaAs FET |
| Download | MGF1601B-01 Download (PDF) |
|
|
|
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
| Part Number | Description |
|---|---|
| MGF1601B | MICROWAVE POWER GaAs FET |
| MGF1202 | GaAs FET |
| MGF1302 | LOW NOISE GaAs FET |
| MGF1303B | LOW NOISE GaAs FET |
| MGF1323 | Low Noise GaAs FET |
| MGF1403B | LOW NOISE GaAs FET |
| MGF1423 | Low Noise GaAs FET |
| MGF1423B | SMALL SIGNAL GaAs FET |
| MGF1425 | Low Noise GaAs FET |
| MGF1801B | MICROWAVE POWER GaAs FET |