ML101U29 - LASER DIODES

Mitsubishi

The ML101U29 by Mitsubishi is a LASER DIODES. Below is the official datasheet preview.

📥 Download Datasheet

ML101U29 LASER DIODES by Mitsubishi - Datasheet Preview — Official preview page of the **ML101U29** LASER DIODES datasheet (Mitsubishi).

Datasheet Details

Part number	ML101U29
Manufacturer	Mitsubishi
File Size	321.53 KB
Description	LASER DIODES
Datasheet	ML101U29-Mitsubishi.pdf
Additional preview pages of the ML101U29 datasheet.

ML101U29 Product details

Description

ML1XX29 is a high-power, high-efficient AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660nm and standard pulse light output of 400mW.

Features

High Output Power: 400mW (Pulse).
High Efficiency: 0.97W/A (typ. ).
Visible Light: 660nm (typ. ).
Low Aspect Ratio (θ⊥ / θ//): 1.5 (typ. ).
Low Astigmatic Distance: ≦1µm (typ. ).

📁 ML101U29 Similar Datasheet

ML101J18 - LASER DIODES (Mitsubishi Electric)
ML101J21 - LASER DIODES (Mitsubishi Electric)
ML101J22 - a high power AlGaInP semiconductor laser (Mitsubishi Electric)
ML101J23 - LASER DIODES (Mitsubishi Electric)
ML101J24 - LASER DIODES (Mitsubishi Electric)
ML101J25 - LASER DIODES (Mitsubishi Electric)
ML101J26 - LASER DIODES (Mitsubishi Electric)
ML101J27 - LASER DIODES (Mitsubishi Electric)

Other Datasheets by Mitsubishi

ML1012R - a high power AlGaInP semiconductor laser
ML1013R - a high power AlGaInP semiconductor laser
ML1016R - a high power AlGaInP semiconductor laser
ML101J10 - a high power AlGaInP semiconductor laser
ML101J14 - a high power AlGaInP semiconductor laser
ML101J8 - a high power AlGaInP semiconductor laser

Published: Jun 10, 2015 |