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PM100PRMS10D0R1S2D0120
FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE
PM100RSD120
FEATURE a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse
recovery characteristics. c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
PM100RSD120 Datasheet
