PM200CBS060 Datasheet | Mitsubishi Electric

FEATURE a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Over-temperature protection by detecting Tj of the IGBT chips - 3φ 200A, 600V Current-sense IGBT type inverter - Monolithic gate drive & protection logic - Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage - Acoustic noise-less 18.5/22k W class inverter application APPLICATION Servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 7 23.79 106±0.3 10.16 10.16 10.16 150.64 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 71±0.3 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 2.54 ± 0.25 R7 4-φ5.5 MOUNTING HOLES W 15 19 V 19 U 19 N 19 P 10 9 5 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. VWPC WP VWP1 VVPC VP VVP1 VUPC UP 9. 10. 11. 12. 13. 14. 15. VUP1 VNC VN1 WN VN UN Fo LABEL Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ...