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MITSUBISHI MITSUBISHI MODULES>
PM200CBS060 PM200CBS060
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
PM200CBS060
FEATURE
a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Over-temperature protection by detecting Tj of the IGBT chips • 3φ 200A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 18.
PM200CBS060 Datasheet
