Datasheet Summary
MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES>
PM200RSD060 PM200RSD060
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package patibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
- 3φ 150A, 600V Current-sense IGBT for 15kHz switching
- 75A, 600V Current-sense regenerative brake IGBT
- Monolithic gate drive & protection logic
-...
