• Part: RA30H4452M1A
  • Description: Silicon RF Power Modules
  • Manufacturer: Mitsubishi Electric
  • Size: 1.10 MB
RA30H4452M1A Datasheet (PDF) Download
Mitsubishi Electric
RA30H4452M1A

Description

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
  • Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
  • Broadband Frequency Range: 440-520MHz
  • High speed Output rise/fall time. Ton <60μsec , Toff <20μsec @ f=440-520MHz, VDD =12.5V,Pin=50mW, VGG2=3.0V, Zg=Zl=50Ω,Pout=10W (VGG1:adj. or VGG2:adj.)