RA60H3847M1 Datasheet Silicon RF Power Modules

Manufacturer: Mitsubishi Electric

Datasheet Details

The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range.

The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors.

Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.

< Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp.

Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V).
Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 378-470MHz.
Metal shield structure that makes the improvements of spurious radiation simple.
Module Size: 67 x 19.4 x 9.9 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (.

Part Number	Description