RA60H3847M1 Datasheet - Mitsubishi

Silicon RF Power Modules

RA60H3847M1 Features

* Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)

* Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 378-470MHz

* Metal shield structure that makes the improvements of spurious radiation simple

* Module Size: 67 x 19.4

RA60H3847M1 General Description

The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range. The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leak.

RA60H3847M1 Datasheet (607.38 KB)

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RA60H3847M1

Manufacturer:

Mitsubishi

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607.38 KB

Description:

Silicon rf power modules.

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RA60H3847M1 Silicon Power Modules Mitsubishi

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RA60H3847M1 Features

RA60H3847M1 General Description

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