RA60H3847M1 Description
The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range. The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.
RA60H3847M1 Key Features
- Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)
- Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
- Broadband Frequency Range: 378-470MHz
- Metal shield structure that makes the improvements of spurious radiation simple
- Module Size: 67 x 19.4 x 9.9 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output po
- RA60H3847M1 is a RoHS pliant product
- RoHS pliance is indicate by the letter “G” after the Lot Marking
- This product include the lead in the Glass of electronic parts and the
- Pin Pout Tcase(OP)