The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200DC-34N
q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm
4(E1)
2(C2) C2
20±0.1
E1
4
2
G1
124±0.25
140±0.5
G2 C1 3(C1) 1(E2) E2
3
1
30±0.2
E1 G1 C1 C2 G2
E2
CIRCUIT DIAGRAM
6 - M4 NUTS
53±0.2
16±0.2 18±0.2 40±0.2 44±0.
CM1200DC-34N Datasheet
