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Mitsubishi Electric

CM1200HA-34H Datasheet Preview

CM1200HA-34H Datasheet

IGBT Module

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MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM1200HA-34H
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
CC
CM E
E
E
C
G
3 - M4 NUTS
16.5
2.5
18.5
61.5
18
4 - M8 NUTS
CC
C
G
E
EE
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
11
14.5
5
35
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003




Mitsubishi Electric

CM1200HA-34H Datasheet Preview

CM1200HA-34H Datasheet

IGBT Module

No Preview Available !

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 95°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
1700
±20
1200
2400
1200
2400
13800
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 850V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 850V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
Turn-off delay time
RG = 1.6
tf Turn-off fall time
Resistive load switching operation
VEC (Note 2) Emitter-collector voltage
IE = 1200A, VGE = 0V
trr (Note 2) Reverse recovery time
IE = 1200A
Qrr (Note 2) Reverse recovery charge
die / dt = –2400A / µs
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Junction to case, IGBT part
Junction to case, FWDi part
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
5.5
2.75
3.30
140
20.0
7.6
6.6
2.40
200
0.008
Max
30
6.5
0.5
3.58
1.20
1.50
2.00
0.60
3.12
2.00
0.009
0.028
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003


Part Number CM1200HA-34H
Description IGBT Module
Maker Mitsubishi Electric
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CM1200HA-34H Datasheet PDF






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