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Mitsubishi Electric

CM1200HA-66H Datasheet Preview

CM1200HA-66H Datasheet

IGBT Module

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PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-66H
q IC ................................................................ 1200A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
CC
CM E
E
C EG
3 - M4 NUTS
79.4
20.25
41.25
EC
E
C
G
C
E
CIRCUIT DIAGRAM
8 - φ 7MOUNTING HOLES
61.5 61.5
13
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998




Mitsubishi Electric

CM1200HA-66H Datasheet Preview

CM1200HA-66H Datasheet

IGBT Module

No Preview Available !

PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
Main terminal to Base, AC for 1 minute
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
(Note 2)
(Note 2)
Ratings
3300
±20
1200
2400
1200
2400
10420
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 8.24
2.84 ~ 3.43
0.88 ~ 1.08
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1650V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1650V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
tf
Turn-off delay time
Turn-off fall time
RG = 2.5
Resistive load switching operation
VEC (Note 1) Emitter-collector voltage
IE = 1200A, VGE = 0V
trr (Note 1) Reverse recovery time
IE = 1200A
Qrr (Note 1)
Rth(j-c)Q
Rth(j-c)R
Reverse recovery charge
Thermal resistance
die / dt = –2400A / µs
IGBT part
FWDi part
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
4.40
4.80
130
7
3
10
3.30
300
0.006
Max
15
Unit
mA
7.5
0.5
5.72
1.60
2.00
2.50
1.00
4.29
1.20
0.012
0.024
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
°C/W
°C/W
°C/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998


Part Number CM1200HA-66H
Description IGBT Module
Maker Mitsubishi Electric
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CM1200HA-66H Datasheet PDF






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