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CM1200HA-66H - IGBT

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www.DataSheet4U.com PRE . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-66H q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57±0.25 190 171 57±0.25 57±0.25 6 - M8 NUTS 20 E E 40 124±0.25 140 G C C C C C CM E E E C E G CIRCUIT DIAGRAM 20.25 41.25 3 - M4 NUTS 79.