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Mitsubishi Electric
Mitsubishi Electric

CM75DU-12F Datasheet Preview

CM75DU-12F Datasheet

HIGH POWER SWITCHING USE

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CM75DU-12F pdf
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CM75DU-12F
MITSUBISHI IGBT MODULES
CM75DU-12F
HIGH POWER SWITCHING USE
¡IC ..................................................................... 75A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
7
17
Tc measured point
94
80 ±0.25
23 23
2–φ6.5
MOUNTING HOLES
C2E1
E2
C1
Dimensions in mm
4
3–M5NUTS
12mm deep
12
16 2.5 25 2.5 16
LABEL
13.5
TAB #110. t=0.5
C2E1
RTC
E2
RTC
C1
CIRCUIT DIAGRAM
Sep.2000



Mitsubishi Electric
Mitsubishi Electric

CM75DU-12F Datasheet Preview

CM75DU-12F Datasheet

HIGH POWER SWITCHING USE

No Preview Available !

CM75DU-12F pdf
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM75DU-12F
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
600
±20
75
150
75
150
290
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
Parameter
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Min.
VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V
5
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 75A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 75A, VGE = 15V
VCC = 300V, IC = 75A
VGE1 = VGE2 = 15V
RG = 8.3, Inductive load switching operation
IE = 75A
IE = 75A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied*2 (1/2 module)
Tc measured point is just under the chips
8.3
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Limits
Typ.
6
1.6
1.6
465
1.4
0.07
Max.
1
Unit
mA
7
20
2.2
20
1.4
0.75
100
80
300
250
150
2.6
0.43
0.9
0.34*3
83
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Sep.2000


Part Number CM75DU-12F
Description HIGH POWER SWITCHING USE
Maker Mitsubishi Electric
Total Page 4 Pages
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CM75DU-12F pdf
CM75DU-12F Datasheet PDF
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