M63812KP Datasheet | Mitsubishi Electric

.. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300m A TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION IN1→ IN2→ IN3→ INPUT IN4→ IN5→ IN6→ IN7→ 1 2 3 4 5 6 7 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 OUTPUT Features q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300m A) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta=- 40 to +85 °C) → MOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM OUTPUT Vz=7V APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND The seven circuits share the and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω FUNCTION The M63812P, M63812FP, M63812GP and M63812KP each have seven circuits consisting of NPN transistor.A spikekiller clamping diode is provided between each output pin (collector) and pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300m A collector current. A maximum of 35V voltage can be applied between the collector and...