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M63813FP Datasheet (M63813xx) 7-UNIT 300mA TRANSISTOR ARRAY

Manufacturer: Mitsubishi Electric

Overview: www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63813P/FP/GP/KP 7-UNIT 300mA.

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General Description

M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta =.
  • 40 to +85 °C) q GND →COM COMMOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP).

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