M63813P Datasheet | Mitsubishi Electric

are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. OUTPUT Features Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300m A) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = - 40 to +85 °C) q → MOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 2.7k 10k GND The seven circuits share the and GND. FUNCTION The M63813P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300m A collector current. A maximum of 35V voltage can be applied between the collector and emitter. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = - 40 ~ +85°C) Conditions Output, H Current per circuit output, L Ratings - 0.5 ~ +35 300 - 0.5 ~ +35 300 M63813P M63813FP M63813GP M63813KP 35 1.47 1.00 0.80 0.78 - 40 ~ +85 - 55 ~ +125 Unit V m A V m A V Input voltage Clamping diode forward current Clamping diode reverse voltage Ta = 25°C, when mounted on board Pd Power dissipation Topr Tstg Operating temperature Storage...