M63826GP Datasheet | Mitsubishi Electric

DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply. Production lineup has been newly expanded with the addition of 225mil (GP) package. M63826P and M63826FP have the same pin connection as M54526P and M54526FP. (patible with M54526P and M54526FP) More over, the features of M63826P and M63826FP are equal or superior to those of M54526P and M54526FP. FEATURES q Three package configurations (P, FP and GP) q Pin connection patible with M54526P and M54526FP q q q q q PIN CONFIGURATION IN1→ IN2→ 1 2 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 IN3→ 3 INPUT IN4→ 4 IN5→ IN6→ IN7→ GND 5 6 7 8 OUTPUT → MON 16P4(P) 16P2N-A(FP) Package type 16P2S-A(GP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (IC(max) = 500m A) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = - 40 to +85 °C) CIRCUIT DIAGRAM OUTPUT INPUT 10.5k APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces FUNCTION The M63826P, M63826FP and M63826GP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5k Ω between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500m A maximum. Collectoremitter supply voltage is 50V maximum.The M63826FP and M63826GP is enclosed in molded small flat package, enabling space-saving design. 7.2k 3k The seven circuits share the and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg...