Datasheet4U Logo Datasheet4U.com

MGF4953B - SUPER LOW NOISE InGaAs

Description

The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Features

  • Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ. ) High associated gain @ f=20GHz Gs = 10.5dB (Typ. ) Fig.1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGF4951A SUPER LOW NOISE InGaAs HEMT Mitsubishi
MGF4952A SUPER LOW NOISE InGaAs HEMT Mitsubishi
MGF4916G SUPER LOW NOISE InGaAs HEMT Mitsubishi
MGF4919G SUPER LOW NOISE InGaAs HEMT Mitsubishi
MGF4921AM SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric Semiconductor

Other Datasheets by Mitsubishi Electric

Part Number Description
MGF4953A SUPER LOW NOISE InGaAs HEMT
MGF4954A SUPER LOW NOISE InGaAs HEMT
MGF4910D (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT
MGF4910E (MGF4910E Series) Super Low Noise InGaAs HEMT
MGF4914D (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Nｏｖ./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.) Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric APPLICATION C to K band low noise amplifiers QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs.
Published: |