MGF4953B ingaas equivalent, super low noise ingaas.
Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.)
Fig.1
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The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.
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