The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Features
Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. )
(1.05)
①
C to K band low noise amplifiers
0.5±0.1
③
1.19±0.2 0.125 ±0.05.
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Other Datasheets by Mitsubishi Electric
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MGF4914E- (MGF4910E Series) Super Low Noise InGaAs HEMT
MGF4916D- (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT
MGF4917D- (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT
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Full PDF Text Transcription
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MITSUBISHI SEMICONDUTOR
Feb./2007
MGF4961B
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Outline Drawing
4.0±0.2 (1.05) 1.9±0.1 (1.05)
(unit: mm)
FEATURES
Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.)
(1.05)
①
C to K band low noise amplifiers
0.5±0.1
③
1.19±0.2 0.125 ±0.05
QUALITY GRADE
GG GD-31
(1.05)
APPLICATION
1.02±0.1
②
②
1.9±0.1
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel
www.DataSheet4U.com
4000pcs.
MGF4961B Datasheet
