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MGF4961B Datasheet, Mitsubishi Electric

MGF4961B hemt equivalent, super low noise ingaas hemt.

MGF4961B Avg. rating / M : 1.0 rating-11

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MGF4961B Datasheet

Features and benefits

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 .

Application

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Description

The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.0±0.2 (1.05) 1.9±0.1 (1.05) (unit: mm) FEATURES Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain.

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TAGS

MGF4961B
SUPER
LOW
NOISE
InGaAs
HEMT
Mitsubishi Electric

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