• Part: MGFC40V3742
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 87.73 KB
Download MGFC40V3742 Datasheet PDF
Mitsubishi Electric
MGFC40V3742
MGFC40V3742 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET > - 4.2 GHz BAND / 10W DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Features Class A operation Internally matched to 50(ohm) system - High output power P1dB=10W (TYP.) @f=3.7 - 4.2GHz - High power gain GLP=11dB (TYP.) @f=3.7 - 4.2GHz - High power added efficiency P.A.E.=32% (TYP.) @f=3.7 - 4.2GHz - Low distortion [item -51] IM3=-45dBc (TYP.) @Po=29dBm S.C.L APPLICATION - item 01 : 3.7 - 4.2 GHz band power amplifier - item 51 : 3.7 - 4.2 GHz band digital radio...