MGFC40V4450
MGFC40V4450 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET >
- 5.0 GHz BAND / 10W
DESCRIPTION
The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 3.7
- 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Internally matched to 50(ohm) system
- High output power
P1dB=10W (TYP.) @f=4.4
- 5.0GHz
- High power gain
GLP=10.0dB (TYP.) @f=4.4
- 5.0GHz
- High power added efficiency
P.A.E.=32% (TYP.) @f=4.4
- 5.0GHz
- Low distortion [item -51]
IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L
APPLICATION
- item 01 : 4.4
- 5.0 GHz band microwave high power amplifier
- item 51 : 4.4
- 5.0 GHz band digital radio...
