MGFC40V5964
MGFC40V5964 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET >
- 6.4 GHz BAND / 10W
DESCRIPTION
The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9
- 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Class A operation Internally matched to 50(ohm) system
- High output power
P1dB=10W (TYP.) @f=5.9
- 6.4GHz
- High power gain
GLP=10dB (TYP.) @f=5.9
- 6.4GHz
- High power added efficiency
P.A.E.=30% (TYP.) @f=5.9
- 6.4GHz
- Low distortion [item -51]
IM3=-49dBc (TYP.) @Po=29dBm S.C.L
APPLICATION
- item 01 : 5.9
- 6.4 GHz band power amplifier
- item 51 : 5.9
- 6.4 GHz band digital radio...
