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MGFC40V5964 - C band internally matched power GaAs FET

Description

The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=10dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [item -51] IM3=-49dBc (TYP. ) @Po=29dBm S. C. L.

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< C band internally matched power GaAs FET > MGFC40V5964 5.9 – 6.4 GHz BAND / 10W DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=10W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=10dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz  Low distortion [item -51] IM3=-49dBc (TYP.) @Po=29dBm S.C.L APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.
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