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MGFC42V5964A - C band internally matched power GaAs FET

Description

The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=16W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =33% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=31.0dBm S. C. L.

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< C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=31.0dBm S.C.L APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication QUALITY  IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.
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