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ML101J26 - LASER DIODES

Description

ML1XX26 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 300mW.

Features

  • a high-power, high-efficient AlGaInP.
  • High Output Power: 300mW (Pulse).
  • High Efficiency: 0.95W/A (typ. ).
  • Visible Light: 658nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ. ).
  • Low Astigmatic Distance: 1 µm (typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI LASER DIODES ML1XX26 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J26 FEATURES a high-power, high-efficient AlGaInP •High Output Power: 300mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX26 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 300mW. ML1XX26 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX26 has a window -mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation at 75 °C.
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