RA30H3340M - Silicon RF Power Modules

Mitsubishi Electric

Datasheet Details

Part number	RA30H3340M
Manufacturer	Mitsubishi Electric
File Size	198.70 KB
Description	Silicon RF Power Modules
Datasheet	RA30H3340M_MitsubishiElectric.pdf

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 330-400MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V www. DataSheet4U. com.
66 x 21 x 9.8 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG),.

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Published: Jul 12, 2007 |