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RA30H3340M - Silicon RF Power Modules

General Description

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 330-400MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V www. DataSheet4U. com.
  • 66 x 21 x 9.8 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG),.

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Full PDF Text Transcription for RA30H3340M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RA30H3340M. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H33...

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30-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at

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