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RA30H3340M Datasheet, Mitsubishi Electric

RA30H3340M Datasheet, Mitsubishi Electric

RA30H3340M

datasheet Download (Size : 198.70KB)

RA30H3340M Datasheet

RA30H3340M modules equivalent, silicon rf power modules.

RA30H3340M

datasheet Download (Size : 198.70KB)

RA30H3340M Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 330-400MHz

Description

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.

Image gallery

RA30H3340M Page 1 RA30H3340M Page 2 RA30H3340M Page 3

TAGS

RA30H3340M
Silicon
Power
Modules
Mitsubishi Electric

Manufacturer


Mitsubishi Electric

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