RD01MUS2 Key Features
- High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz -High Efficiency: 65%typ. -Integrated gate protection diode
- Part: RD01MUS2
- Description: Silicon MOSFET Power Transistor
- Manufacturer: Mitsubishi Electric
- Size: 1.11 MB
Other RD01MUS2 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Mitsubishi Electric |
RD01MUS2B | Silicon MOSFET Power Transistor |