RD30HVF1 Description
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency:.
- Part: RD30HVF1
- Manufacturer: Mitsubishi Electric
- Size: 398.19 KB
