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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
2 3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.
2.3+/-0.3
2.8+/-0.3 0.10
3.0+/-0.4
5.1+/-0.5
PIN 1.Drain 2.Source 3.Gate UNIT:mm
RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
RD30HVF1 Datasheet
