Full PDF Text Transcription for RD45HMF1 (Reference)
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RD45HMF1. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Power Transistor 900MHz,...
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0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Power Transistor 900MHz,45W DESCRIPTION RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 •High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz •High Efficiency: 50%typ. 2 10.0+/-0.3 FEATURES 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) www.DataSheet4U.
RD45HMF1 Datasheet
