RD45HMF1 transistor equivalent, silicon mosfet power transistor.
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in 800-900MHz Band mobile radio sets.
5.0+/-0.3
1.
OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
*High Effi.
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