RD45HMF1 Description
RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency:.
RD45HMF1 is Silicon MOSFET Power Transistor manufactured by Mitsubishi Electric.
RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency:.