A35H1516M - RA35H1516M

Mitsubishi Electric Semiconductor

The A35H1516M by Mitsubishi Electric Semiconductor is a RA35H1516M. Below is the official datasheet preview.

Datasheet Details

Part number	A35H1516M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	112.99 KB
Description	RA35H1516M
Datasheet	A35H1516M_MitsubishiElectricSemiconductor.pdf
Additional preview pages of the A35H1516M datasheet.

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout).

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Published: Feb 18, 2008 |