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Mitsubishi Electric Semiconductor

CM75TX-24S Datasheet Preview

CM75TX-24S Datasheet

IGBT Modules

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<IGBT Modules>
CM75TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
sixpack (3φ Inverter)
Collector current IC .............….......................… 7 5 A
Collector-emitter voltage VCES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
Flat base Type
Copper base plate (non-plating)
Tin plating pin terminals
RoHS Directive compliant
Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
t=0.8
SECTION A
P(54~56)
INTERNAL CONNECTION
P1(28~30)
GUP(1)
EUP(2)
GVP(9)
EVP(10)
GWP(17)
EWP(18)
GUN(5)
EUN(6)
N(59~61)
U(48~50)
GVP(13)
EVP(14)
V(42~44)
GWN(21)
EWN(22)
W(36~38)
TH1(31)
TH2(32)
N1(23~25)
Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
but should use all each three pins for the external wiring.
Publication Date : April 2014
1
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.




Mitsubishi Electric Semiconductor

CM75TX-24S Datasheet Preview

CM75TX-24S Datasheet

IGBT Modules

No Preview Available !

<IGBT Modules>
CM75TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
IE
IERM
(Note1)
(Note1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
C-E short-circuited
DC, TC=122 °C (Note2, 4)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tjmax
TCmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note4)
Tjop
Operating junction temperature
Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
ICES
IGES
VGE(th)
VCesat
( Te r m i n a l )
VCesat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note1)
EC
( Te r m i n a l )
V (Note1)
EC
(Chip)
t (Note1)
rr
Q (Note1)
rr
Eon
Eoff
E (Note1)
rr
RCC'+EE'
rg
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
Conditions
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=7.5 mA, VCE=10 V
IC=75 A, VGE=15 V,
Refer to the figure of test circuit.
(Note6)
IC=75 A,
VGE=15 V,
(Note6)
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=600 V, IC=75 A, VGE=15 V
VCC=600 V, IC=75 A, VGE=±15 V,
RG=8.2 Ω, Inductive load
IE=75 A, G-E short-circuited,
Refer to the figure of test circuit.
(Note6)
IE=75 A,
G-E short-circuited,
(Note6)
VCC=600 V, IE=75 A, VGE=±15 V,
RG=8.2 Ω, Inductive load
VCC=600 V, IC=IE=75 A,
VGE=±15 V, RG=8.2 Ω, T j =150 °C,
Inductive load
Main terminals-chip, per switch,
TC=25 °C (Note4)
Per switch
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1200
± 20
75
150
600
75
150
Rating
2500
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
175
-
-
-
-
1.80
1.80
1.80
1.70
1.70
1.70
-
4.0
7.3
8.0
6.9
-
0
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
7.5
1.5
0.13
-
300
200
600
300
2.25
-
-
2.15
-
-
300
-
-
-
-
2.4
-
Unit
V
V
A
W
A
Unit
V
°C
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
V
V
ns
μC
mJ
mJ
mΩ
Ω
Publication Date : April 2014
2


Part Number CM75TX-24S
Description IGBT Modules
Maker Mitsubishi Electric Semiconductor
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CM75TX-24S Datasheet PDF






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