The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM800E2Z-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2Z-66H
q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake)
APPLICATION DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
K (C)
G E
124 ±0.25 140
C
C
C
40
20
E
E
A (E)
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25 3 - M4 NUTS 79.4 61.5
41.25
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
w
w
w
.D
a
S a t
e e h
U 4 t
.
CM800E2Z-66H Datasheet
