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Mitsubishi Electric Semiconductor

FK16KM-6 Datasheet Preview

FK16KM-6 Datasheet

HIGH-SPEED SWITCHING USE

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FK16KM-6
MITSUBISHI Nch POWER MOSFET
FK16KM-6
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.41
¡ID ......................................................................................... 16A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
300
±30
16
48
16
48
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
g
Feb.1999




Mitsubishi Electric Semiconductor

FK16KM-6 Datasheet Preview

FK16KM-6 Datasheet

HIGH-SPEED SWITCHING USE

No Preview Available !

MITSUBISHI Nch POWER MOSFET
FK16KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50
IS = 8A, VGS = 0V
Channel to case
IS = 16A, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
300 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
0.31
0.41
2.48 3.28
V
6.5 10.0 —
S
— 1050 — pF
— 220 — pF
— 45 — pF
— 20 — ns
— 40 — ns
— 110 — ns
— 50 — ns
— 1.5 2.0 V
— — 3.57 °C/W
— — 150 ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
3 tw=10µs
2
101 100µs
7
5
1ms
3
2
100 10ms
7
5
3
2 TC = 25°C
Single Pulse
10–1
DC
7
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999


Part Number FK16KM-6
Description HIGH-SPEED SWITCHING USE
Maker Mitsubishi Electric Semiconductor
Total Page 5 Pages
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