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Mitsubishi Electric Semiconductor

PM75RLA060 Datasheet Preview

PM75RLA060 Datasheet

Intelligent Power Module

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLA060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75RLA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
d) Current rating of brake part increased.
67% for the current rating of inverter part.
• 3φ 75A, 600V Current-sense IGBT type inverter
• 50A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 5.5kW/7.5kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
11
7
19.75
19.75 3.25 16
3-2
120
106
16 16
3-2 3-2
15.25
6-2
Dimensions in mm
2-φ5.5
MOUNTING HOLES
16
3
1 5 9 13 19
6-M5 NUTS
B
10.75
32.75
U VW
23 23
19-s0.5
12
23
22
+
1
0.5
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
May 2005




Mitsubishi Electric Semiconductor

PM75RLA060 Datasheet Preview

PM75RLA060 Datasheet

Intelligent Power Module

No Preview Available !

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLA060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Br Fo
1.5k
VNC WN
VN1
VN
UN
WP VWP1
VWPC WFO
VP VVP1
VVPC VFO
UP VUP1
VUPC UFO
1.5k 1.5k 1.5k
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT
B N W V UP
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
±ICP
PC
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
(Note-1)
BRAKE PART
Symbol
VCES
IC
ICP
PC
VR(DC)
IF
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature
Condition
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
(Note-1)
CONTROL PART
Symbol
Parameter
VD Supply Voltage
VCIN
Input Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
Condition
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN VN WN Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
Sink current at UFO, VFO, WFO, FO terminals
Ratings
600
75
150
390
20 ~ +150
Unit
V
A
A
W
°C
Ratings
600
50
100
297
600
50
20 ~ +150
Unit
V
A
A
W
V
A
°C
Ratings
20
20
20
20
Unit
V
V
V
mA
May 2005


Part Number PM75RLA060
Description Intelligent Power Module
Maker Mitsubishi Electric Semiconductor
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PM75RLA060 Datasheet PDF






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