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RA07H0608M Datasheet, Mitsubishi Electric Semiconductor

RA07H0608M module equivalent, mitsubishi rf mosfet module.

RA07H0608M Avg. rating / M : 1.0 rating-11

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RA07H0608M Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
* ηT>38% @ Pout=7W (V GG control), VDD=12.5V, Pin=3.

Description

The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0.

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