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RA35H1516M-01 Datasheet, Mitsubishi Electric Semiconductor

RA35H1516M-01 Datasheet, Mitsubishi Electric Semiconductor

RA35H1516M-01

datasheet Download (Size : 75.86KB)

RA35H1516M-01 Datasheet

RA35H1516M-01 radio equivalent, 154-162mhz 40w 12.5v mobile radio.

RA35H1516M-01

datasheet Download (Size : 75.86KB)

RA35H1516M-01 Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
* Low-Power Control Current IGG=1mA (typ) a.

Description

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.

Image gallery

RA35H1516M-01 Page 1 RA35H1516M-01 Page 2 RA35H1516M-01 Page 3

TAGS

RA35H1516M-01
154-162MHz
40W
12.5V
MOBILE
RADIO
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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