RD100HHF1 Description
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency:.
- Part: RD100HHF1
- Manufacturer: Mitsubishi Electric
- Size: 239.92 KB
