Datasheet4U Logo Datasheet4U.com

RD100HHF1 Datasheet MOS FET

Manufacturer: Mitsubishi Electric

Overview: www.DataSheet.co.kr MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.

General Description

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

OUTLINE DRAWING 4-C2 24.0+/-0.6 •High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3

Key Features

  • 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7.