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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM100CZ-H Datasheet Preview

RM100CZ-H Datasheet

HIGH POWER GENERAL USE INSULATED TYPE

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RM100CZ-H pdf
RM100DZ/CZ-M,-H
MITSUBISHI DIODE MODULES
RM100DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
IF(AV) Average forward current .......... 100A
VRRM Repetitive peak reverse voltage
................ 400/800V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
17.5 20
20
3–M5
LABEL
(DZ)
A1K2
K1
SR1
A2
SR2
(CZ)
A1
K1K2
SR1
A2
SR2
Feb.1999



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM100CZ-H Datasheet Preview

RM100CZ-H Datasheet

HIGH POWER GENERAL USE INSULATED TYPE

No Preview Available !

RM100CZ-H pdf
MITSUBISHI DIODE MODULES
RM100DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
M
400
480
320
Symbol
IF (RMS)
IF (AV)
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=115°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M5
Mounting screw M6
— Weight
Typical value
H
800
960
640
Ratings
157
100
2000
1.7 × 104
1000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Unit
V
V
V
Unit
A
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
— Insulation resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=320A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
Limits
Typ.
Max.
20
1.25
0.3
0.2
10 — —
Unit
mA
V
°C/ W
°C/ W
M
Feb.1999


Part Number RM100CZ-H
Description HIGH POWER GENERAL USE INSULATED TYPE
Maker Mitsubishi Electric Semiconductor
Total Page 3 Pages
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RM100CZ-H pdf
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