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Monolithic System Technology

MC8051M36 Datasheet Preview

MC8051M36 Datasheet

36-Bit SRAM

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MOSYS®
MC8051M36
36-Mbit: 1Mx36
Symmetric Pipelined Burst SRAM
High Performance
133-200MHz Speed grades
3-1-1-1 Burst Read
3-1-1-1 Burst Write
3-1-1-1-1-1-1-1... pipelined operation
Symmetric Pipeline
No bus turnaround latency allowing 100% bus efficiency
Low Power
Low active power
Ultra low power ZZ standby mode
1.8V ± 5% Core power supply (VDD)
1.8, 2.5 or 3.3V I/O power supply (VDDQ)
Compatibility
Individual Byte Write masking
Interleaved and burst address support
Three chip enable inputs
Clock Enable and Suspend
Applications
Ideal for high speed, low power data and tele-
communications applications
______________________________________________
Overview
The MoSys MC8051M36 is a high performance, low power
symmetric pipelined-burst-SRAM (SPSRAM). Fabricated us-
ing an advanced low power, high performance CMOS process
The MoSys MC8051M36 supports SPSRAM operating modes
at maximum burst frequency including indefinite pipelined read
or write (3-1-1-1-1-1-1...)
The MC8051M36 is packaged in a standard 100 lead LQFP.
Lowest Power
The MC8051M36 affords systems dramatic power savings
due to the benefits of its proprietary MoSys technology.
Making it ideal for convection cooled applications, as well as
applications requiring a large amount of SRAM.
DQP3
1
80 DQP2
DQ17
2
79 DQ16
DQ18
3
78 DQ15
VDDQ
4
77 VDDQ
VSSQ
5
76 VSSQ
DQ19
6
75 DQ14
DQ20
7
74 DQ13
DQ21
8
73 DQ12
DQ22
9
72 DQ11
VSSQ
10
71 VSSQ
VDDQ
DQ23
11
12
100 Pin LQFP
70 VDDQ
69 DQ10
DQ24
VDD
13
14
20 mm x 14 mm body
68 DQ9
67 VSS
VDD
15
0.65 mm nominal pin pitch
66
VDD
VDD
16
65 VDD
VSS
17
64 ZZ
DQ25
18
63 DQ8
DQ26
19
62 DQ7
VDDQ
20
61 VDDQ
VSSQ
21
60 VSSQ
DQ27
22
59 DQ6
DQ28
DQ29
23
24
58 DQ5
57 DQ4
DQ30
25
56 DQ3
VSSQ
26
55 VSSQ
VDDQ
27
54 VDDQ
DQ31
28
53 DQ2
DQ32
29
52 DQ1
DQP4
30
51 DQP1
Part Number Designation
Example: MC8051M36L-7R5VI
Device Designation: MC8:, Series: 05
Organization: 1M36
Package Type: L=LQFP
Speed: – 7R5 133MHz
– 6 166MHz
– 5 200MHz
Temp: I = Industrial Temperature
I/O V: V = 2.5-3.3V
Parameter
Cycle Time
Access Time
Clock to High-Z
Symbol -7R5 -6 -5 Units
tKC
7.5 6 5
ns
tKQ
4.2 3.5 3.0
ns
tKQHZ
3.8 3.1 2.9
ns
www.DataSheet4U.com
DS16, Rev 1.2 - 12/18/2001
Preliminary Information
© 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085
Page 1




Monolithic System Technology

MC8051M36 Datasheet Preview

MC8051M36 Datasheet

36-Bit SRAM

No Preview Available !

www.DataSheet4U.com
MOSYS®
MC8051M36
36-Mbit: 1Mx36
Symmetric Pipelined Burst SRAM
MODE
A[19:0]
CE1#, CE2, CE2#
WE#
CKE#
ADV/LD#
BW[4:1]#
CLK
OE#
DQ
DQ
DQ
Address
1Mx36 Bit
Memory Array
Control
DQ
Control Logic
Mux
Output Register
Functional Block Diagram
Command
DS
READ
WRITE
BURST
Action
DESELECT
Begin READ
Begin WRITE
Begin READ
Begin WRITE
Continue DESELECT
State Diagram
www.DataSheet4U.com
DQ[32:1]
DQP[4:1]
DS BURST
DESELECT
READ
READ
BEGIN
READ
DS
WRITE
READ
DS
WRITE
BEGIN
WRITE
WRITE
READ
BURST
BURST
BURST
READ
WRITE
BURST
WRITE
READ
BURST
WRITE
BURST
DS DS
DS16, Rev 1.2 - 12/18/2001
Preliminary Information
© 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085
Page 2


Part Number MC8051M36
Description 36-Bit SRAM
Maker Monolithic System Technology
Total Page 9 Pages
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