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Mos-tech Semiconductor

MT4953 Datasheet Preview

MT4953 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect Transistor
MT4953
FEATURES
Super high dense cell design for low RDS(ON)
Rugged and reliable
Simple drive requirement
SOP-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-30V -5.3A
46@ VGS=-10V
78 @ VGS=-4.5V
NOTEThe MT4953 is available
in a lead-free package
S1 S2
G1 G2
D1 D2
ABSOLUTE MAXIMUM RATINGSTA=25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousª@Tj=125
Symbol
VDS
VGS
ID
Limit
-30
±20
-5.3
- Pulse d b
IDM -24
Drain-source Diode Forward Currentª
Maximum Power Dissipationª
Operating Junction and Storage
Temperature Range
IS
PD
TJ,TSTG
-1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50 /W
©2005 Mos-Tech Semiconductor
1
http//www.mtsemi.com




Mos-tech Semiconductor

MT4953 Datasheet Preview

MT4953 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
MT4953
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DAYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V,ID=-250µA
VDS=-24V,VGS=0V
VGS=±20V,VDS=0V
-30
-1
±100
V
µA
nA
VGS(th)
RDS(ON)
ɡFS
VDS=VGS,ID=-250µA
VGS=-10V,ID=-5.3A
VGS=-4.5V,ID=-4.2A
VGS=-5V,ID=-5.3A
-1 -1.5 -2.5 V
46 55
mΩ
78 85
5S
CISS
COSS
CRSS
VDS=-15V,VGS=0V
f=1.0MHZ
582 pF
125 pF
86 pF
tD(ON)
tr
tD(OFF)
tf
Qɡ
Qɡs
Qɡd
VDD=-15V
ID=-5.3A,
VGEN=-4.5V
RL=10ohm
RGEN=10ohm
VDS=-15V,ID=-1A
VGS=-10V
9 ns
10 ns
38 ns
23 ns
11.7 nC
2.1 nC
2.9 nC
©2005 Mos-Tech Semiconductor
2
http//www.mtsemi.com


Part Number MT4953
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Mos-tech Semiconductor
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MT4953 Datasheet PDF






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