S10A90 Datasheet | Mospec Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory ESD: 4KV(Min.) Human-Body Model SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS TO-220A In pliance with EU Ro Hs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol S10A70 S10A80 S10A90 S10A100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM RMS Reverse Voltage Average Rectifier Forward Current Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range VR(RMS) IF(AV) IFM IFSM TJ , TSTG 80 90 100 56 63 10 10 -65 to +150 ELECTRIAL CHARACTERISTICS Characteristic Symbol S10A70 S10A80 S10A90 S10A100 Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25 ) ( IF =10 Amp TC = 125 ) 0.75 0.68 0.85 0.76 Typical Thermal Resistance junction to case Rθ j-c Unit V /w Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 125...