* ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Labo
S20T100C Datasheet (131.79 KB)
S20T100C
Mospec Semiconductor
131.79 KB
Dual schottky barrier power rectifiers.
MOSPEC S20T100C Switchmode Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high tempe.
📁 Related Datasheet
S20T100CB Dual Schottky Barrier Power Rectifiers (Mospec Semiconductor)
S20T100F Dual Schottky Barrier Power Rectifiers (Mospec Semiconductor)
S20T100FB Dual Schottky Barrier Power Rectifiers (Mospec Semiconductor)
S20T150C Schottky Barrier Rectifiers (Mospec Semiconductor)
S20T150CB Schottky Barrier Rectifiers (Mospec Semiconductor)
S20T150FB Schottky Barrier Rectifiers (Mospec Semiconductor)
S20 Silicon Power Rectifier (Microsemi Corporation)
S2000 Silicon NPN Transistor (Toshiba)
S2000 NPN Transistor (INCHANGE)
S2000 SILICON POWER TRANSISTOR (SavantIC)
