S20T100CB - Dual Schottky Barrier Power Rectifiers

Product Overview

Mospec Semiconductor

Part number	S20T100CB
Manufacturer	Mospec Semiconductor
File Size	130.52 KB
Description	Dual Schottky Barrier Power Rectifiers
Datasheet	S20T100CB Datasheet
Additional preview pages of the S20T100CB datasheet.

＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ＊In compliance with EU RoHs 2002/95/EC directives ＊Mounting Torqure: 5 in-lbs. Max. S20T100CB.

📁 Similar Datasheet

S20 - Silicon Power Rectifier (Microsemi Corporation)
S2000 - Silicon NPN Transistor (Toshiba)
S2000A - Silicon NPN Transistor (Toshiba)
S2000AF - High voltage NPN Power transistor (ST Microelectronics)
S2000AF1 - SILICON POWER TRANSISTOR (SavantIC)
S2000AFI - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
S2000N - Silicon NPN Transistor (Toshiba Semiconductor)
S2001M - (S2001Mxx) SILICON CONTROLLED RECTIFIER (Loras Industries)

Other Datasheets by Mospec Semiconductor

Published: Nov 11, 2016 |