URF2015 Datasheet | Mospec Semiconductor

Features ＊High Surge Capacity ＊Low Power Loss, High efficiency ＊Glass Passivated chip junctions ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊High-Switching Speed 35 Nanosecond Recovery Time ＊Plastic Material used Carries Underwriters Laboratory Mechanical Data ＊Case :JEDEC ITO-220AB molded plastic body ＊Terminals: Plated lead, solderable per MIL-STD-750, Method 2026 ＊Polarity: As marked ＊Mounting Torque: 4-6kg.cm ＊Weight:1.7 g approx. ＊Flammability Classification 94V-O ＊Pb free ＊In pliance with EU Ro Hs directives MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR),TC=55℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz, TC=125℃) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase, 60Hz) Operating and Storage Junction Temperature Range VRRM VRWM VR VR(RMS) IF(AV) IFSM TJ , Tstg 05 50 35 URF20 10 15 100 150 70 105 10 20 20 -65 to +175 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25℃) ( IF =10 Amp TC = 125℃) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) Reverse Recovery Time ( IF = 0.5 A, IR =1.0 , Irr =0.25 A ) Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) VF IR Trr CP URF20 10 15 0.975 0.860 10.0 300 35 Unit 20 200 V 140 V A A A ℃ Unit...