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Motorola Electronic Components Datasheet

0N05HDL Datasheet

MTP60N05HDL

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET .
Power Field Effect Transistor
MTP60N05HDL
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
D
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
50 Vdc
50 Vdc
± 15 Vdc
± 20 Vpk
60 Adc
42
180 Apk
150 Watts
1.0 W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from Case for 5 Seconds
TJ, Tstg
EAS
RθJC
RθJA
TL
– 55 to 175
540
1.0
62.5
260
°C
mJ
°C/W
°C
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

0N05HDL Datasheet

MTP60N05HDL

No Preview Available !

MTP60N05HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25°C)
Gate–Body Leakage Current
(VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 30 Adc)
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 4.0 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 25 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 )
(VDD = 25 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 W )
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
50
1.0
15
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Typ Max Unit
Vdc
——
55 — mV/°C
µAdc
— 10
— 100
nAdc
— 100
1.5
4.5
0.010
48
2.0
0.014
1.0
0.75
Vdc
mV/°C
Ohms
Vdc
mhos
2775
750
150
4000
1070
300
pF
21 40 ns
570 1150
86 170
200 400
42 62 nC
8.0 —
24 —
17 —
0.95
0.85
50
34
15
0.085
1.1
Vdc
ns
µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number 0N05HDL
Description MTP60N05HDL
Maker Motorola
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