0N05HDL
0N05HDL is MTP60N05HDL manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET .™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate
This advanced high- cell density HDTMOS power FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
MTP60N05HDL
Motorola Preferred Device
TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM
™
G CASE 221A- 06, Style 5 TO- 220AB S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10 ms) Drain Current
- Continuous
- Continuous @ 100°C
- Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 m H, RG = 25 Ω) Thermal Resistance
- Junction to Case
- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 Seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 50 50 ± 15 ± 20 60 42 180 150 1.0
- 55 to 175 540 1.0 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C m J °C/W °C
E- FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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