0N05HDL MTP60N05HDL

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET .™ Power Field Effect.

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Datasheet Specifications

Part number: 0N05HDL
Manufacturer: Motorola
File Size: 158.45 KB
Datasheet: 0N05HDL_Motorola.pdf
Description: MTP60N05HDL

Features

* ansistor Device Data MTP60N05HDL V DS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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