900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

1N5521A Datasheet

LOW VOLTAGE AVALANCHE ZENER DIODES

No Preview Available !

IN5518A,B
thru
IN5546A,B
® MOTOROI.A
LOW VOLTAGE AVALANCHE SILICON OXIDE
PASSIVATED ZENER REGULATOR DIODES
Highly reliable silicon regulators utilizing an oxide-passivated
junction for long-term voltage stability. Double slug construction
provides a rugged. glass-enclosed. hermetically sealed structure.
• Low Zener Noise Specified
• Low Maximum Regulation Factor
• Low Zener Impedance
• Low Leakage Current
• Controlled Forward Characteristics
• Temperature Range: -65 to + 2000 C
I I MAXIMUMRATINGS
Rating
DC Power Dissipation @TA =5o"C
Derate above 5o"C
DC Power Dissipation @TL =5o"C
Lead Length = 118"
Derate above 5o"C IFigure 1I
Operating and Storage Junction
Temperature Range
Symbol
Po
Po
TJ,Tstg
Value
400
3.2
500
3.3
-65 to +200
Unit
mW
mW/oC
mW
mWJOC
°c
MECHANICAL CHARACTERISTICS
CASE: l:Iermetically sealed. all'glass
DIMENSIONS: See outline drawing.
FINISH: Allexternel surfaces ere corrosion rasistantand leads are
readily solderable and weldable.
POLARITY: cathode indicatad by polarity band.
WEIGHT: 0.2 Gram lapproxl
MOUNTING POSITION: Any
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
g O.S
" k"~
z
'-...0 0.6
Lo l)S"
~
LE~ r--L=LJAD GTH
TO HEATSINK
iii
Q
.................. 3JS"
'~" 0.4
. ---- "~
r-..J'--. ... """'-
::----,"x. 0.2
. ":::::::"
1.0........... ..........
r-.......
r--. ~
~
o
~~
o 20 40 60 SO 100 120 140 160 ISO 200
TL, LEAD TEMPERATURE IDCI
LOW VOLTAGE AVALANCHE
ZENER DIODES
400 MILLIWATTS
3.3 THRU 33 VOLTS
-I8s 1-
~~~
9-~
rt--~
L~
NOTES:
1. PACKAGE CONTOUR OPTIONAL WITHIN A
AND B. HEAT SLUGS, IF ANY, SHALL BE
INCLUDED WITHIN THIS CYLINDER. BUT
NOT SUSJECT TO THE MINIMUM liMIT
OF B.
2. LEAD DIAMETER NOT CONTROLLED IN
ZONE F TO ALLOW FOR FLASH. LEAD
FINISH BUILDUP AND MINOR IRREGU·
LARITIES OTHER THAN HEAT SLUGS.
3. POLARITY DENOTED BY CATHODE BAND.
4. DIMENSIONING AND TOLERANCING PER
ANSI YI4.5. 1973.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 3.05 5.08 10.12Q 0.200
B 1.52 2.29 0.060 0.090
0 0.46 0.56 0.018 0.022
- -F 1.27 0.050
K 25.40 3S.10 1.000 1.500
All JEDEC dlmanaonl8nd notasapply.
CASE 299-02
DO·204AH
4-70


Motorola Electronic Components Datasheet

1N5521A Datasheet

LOW VOLTAGE AVALANCHE ZENER DIODES

No Preview Available !

1N5518A, B thru 1N5546A, B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Based on dc measurements at thermal equilibrium;
VF = 1.1 Max @ IF = 200 mA for all types)
JEDEC
TypaNo.
(Note1l
Nominal
Zenar Voltage
YZ@IZT
Volts
(Note 2)
Test
Current
IZT
mAde
Max Zener Impedance
a-C·DSuffix
ZZT@lIZT
Ohms
(Nota 3)
Max Raverte Leakage Current
IR
~Ade
(Note 4)
VR -Volts
NonlcA- B-C·D
Suffix Suffix·
B~·DSuffix
Maximum
DC Zenar Currant
IZM
mAde
(No," 5)
a.oC-OSutfix
Max Noilo Density
"IZ=250~A
ND
(Figure 1)
(micro-volts per
square root cycle'
Regulation
Factor
I>YZ
Yoits
INoteS)
lN5618A
lN5519A
lN5520A
lN5521A
lN5522A
lN5523A
lN5524A
lN5525A
lN5526A
lN5527A
lN5528A
lN5529A
lN5530A
lN5531A
lN5532A
lN5533A
lN5534A
lN5535A
lN5536A
lN5537A
lN5536A
lN5539A
lN5540A
lN5541A
lN5542A
lN5543A
lN5544A
lN5545A
lN5546A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
5.0 0.90 1.0
115
24
3.0 0.90 1.0
105
22
1.0 0.90 1.0
96
18
3.0 1.0 1.6
88
22
2.0 1.5 2.0
81
28
2.0 2.0 2.5
75
30
2.0 3.0 3.5
68
30
1.0 4.5 5.0
61
30
1.0 5.5 6.2
56
35
0.5 6.0 6.8
51
40
0.5 6.5 7.5
46
45
0.1 7.0 8.2
42
60
0.05 8.0 9.1
38
80
0.05 9.0 9.9
35
90
0.05 9.5 10.8
32
90
0.01 10.6 11.7
29
100
0.Q1 11.5 12.6
27
100
0.01 12.5 13.5
25
100
0.01 13.0 14.4
24
100
0.01 14.0 15.3
22
100
0.Q1 15.0 16.2
21
100
0.01 16.0 17.1
20
100
0.01 17.0 18.0
19
100
0.Q1 18.0 19.8
17
100
0.01 20.0 21.6
16
100
0.01 21.0 22.4
15
100
0.01 23.0 25.2
14
100
0.Q1 24.0 27.0
13
100
0.Q1 28.0 29.7
12
0.5 0.90
0.5 0.90
0.5 0.85
0.5 0.75
0.5 0.60
0.5 0.65
1.0 0.30
1.0 0.20
1.0 0.10
2.0 0.05
4.0 0.05
4.0 0.05
4.0 0.10
5.0 0.20
10 0.20
15 0.20
20 0.20
20 0.20
20 0.20
20 0.20
20 0.20
20 0.20
20 0.20
20 0.25
20 0.30
20 0.35
20 0.40
20 0.45
20 0.50
Low
YZ
Current
IZL
mAde
2.0
2.0
2.0
2.0
1·0
0.25
0.25
om
0.01
0.01
am
0.01
0.01
om
am
0.01
0.01
0.01
0.01
0.01
0.01
0.Q1
0.01
0.01
0.01
0.01
0.01
0.Q1
0.01
II
NOTE 1 - TOLERANCE AND VOLTAGE DESIGNATION
The JEOEC type numbers shown are :t 10% with guaranteed limits
for VZ, )R, and VF. Units with guaranteed limits for an six parameters
are indiceted by a "8" suffix for :t 5.O"k units, "C" suffix for :t 2.0%
and "0" suffix for :t 1.0%.
NOTE 2 - ZENER VOLTAGE (Vzl MEASUREMENT
Nominal zener voltage is measured with the device junction in
thermal equilibrium with ambient temperature of 250 C.
NOTE 3 - ZENER IMPEDANCE (Zzl DERIVATION
The zener impedance is derived from the 60 Hz ac voltage, which
results when an ae current having an rms value equal to 10% of
the de zener current IIZT) is superimposed on 'ZT.
NOTE 4 - REVERSE LEAKAGE CURRENT URI
Reverse leakage currents are guarantaed and are measured at VR
as shown on the table.
NOTE 5 - MAXIMUM REGULATOR CURRENT (lZMI
The maximum current shown is based on the maximum voltage
of a 5.0% type unit, therefore, it applies only to the "B" suffix
devica. The actual I ZM for any device may not exceed the value
of 400 milliwatts divided by the actual Vz of the device.
NOTE 6 - MAXIMUM REGULATION FACTOR (~Vzl
AVZ is the maximum difference betwean Vz at 'ZT and Vz
at IZL measured with the device junction in thermal equilibrium.
4-71


Part Number 1N5521A
Description LOW VOLTAGE AVALANCHE ZENER DIODES
Maker Motorola
Total Page 4 Pages
PDF Download

1N5521A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 1N5521 0.4W Low Voltage Avalanche Diodes
JGD
2 1N5521 Low Noise Zener Diode
MA-COM
3 1N5521 Diode Zener Single 4.3V 20% 400mW 2-Pin DO-35
New Jersey Semiconductor
4 1N5521A (1N5518A - 1N5546A) ZENER DIODES
New Jersey Semi-Conductor
5 1N5521A LOW VOLTAGE AVALANCHE ZENER DIODES
Motorola
6 1N5521B LOW REVERSE LEAKAGE CHARACTERISTICS
Compensated Deuices Incorporated
7 1N5521B 500mW Zener Diodes
Microsemi
8 1N5521B SILICON ZENER DIODES
Central Semiconductor
9 1N5521B Diode Zener Single 4.3V 5% 400mW 2-Pin DO-35
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy