Full PDF Text Transcription for 20N40CL (Reference)
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20N40CL. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-...
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ed Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.