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20N40CL - MGP20N40CL

Key Features

  • Gate.
  • Emitter ESD protection, Gate.
  • Collector overvoltage protection from.

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Full PDF Text Transcription for 20N40CL (Reference)

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-...

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ed Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.