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Motorola Electronic Components Datasheet

2N2076 Datasheet

PNP germanium power transistors

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2N2075 thru 2N2082 (GERMANIUM)
2N2075A thru 2N2082A
CASE 5
(TO-36)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
PNP germanium power transistors for high-power
applications in high-reliability equipment.
Symbol
VCEO
2N2078
2N2082
25
2N2077
2N2081
45
2N207&
2N2080
55
2N2075
2N2079
65
Unit
Vdc
Collector-Emitter Voltage
VCES
40
50
70
80 Vdc
Collector-Base Voltage
VCB
40 50 70
80 Vdc
Emitter-Base Voltage
VEB
20 25 35
40 Vdc
Collector Current
IC 15 Adc
Total Device Dissipation @ TC = 25°C
PD
170 Watts
Operating Junction Temperature Range
TJ
-65 to +110
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
eJC
Max Unit
0.5 °C/W
175
~
~ 150
z
0
~ 125
icii
~ 100
.~..
75~
ID
~
.c~.. 50
co
iii!
~c 25
,t
~!II..
""~"'"
" ""-
~
POWER-TEMPERATURE DERATING CURVE
The maximum average power is related to maxi-
mum junction temperature by the thermal resistance
factor.
This curve has a value of 170 Walls at case tem-
peratures of 25°C and is 0 Walls at 110°C with a
linear relation between the two temperatures such
that:
= IIOO_Tc
allowable P.
0.5
0
o 10 20 30 40 50 60 70 80 90 100 110
Te. CASE TEMPERATURE (OC)
2-239


Motorola Electronic Components Datasheet

2N2076 Datasheet

PNP germanium power transistors

No Preview Available !

2N2075 thru 2N2082 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1. 0 Adc, IB = 0)
Collector-Emitter Breakdown Voltage*
(IC = 300 mAdc, VBE = 0)
Floating Potential
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N2078, 2N2082
2N2077, 2N2081
2N2076, 2N2080
2N2075, 2N2079
2N2078, 2N2082
2N2077, 2N2081
2N2076, 2N2080
2N2075, 2N2079
2N2078, 2N2082
2N2077, 21"2081
2N2076, 2N2080
2N2075, 2N2079
Collector Cutoff Current
(VCB = 2.0 Vdc, IE = 0)
(VCB = VCB(max), VEB = 1. 5 Vdc)
(VCB=VCB(max)' IE=O, TC =+71"C)
Emitter Cutoff Current
(VBE = VBE(max)' IC = 0)
(VBE = VBE(max) , IC = 0, TC =+71"C)
Symbol
BV C E O
BV CES
VEBF
ICBO
lEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 1. 2 Ade, VCE = 2.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC =5.0 Adc, VCE = 2.0 Vdc, TC = -55°C)
(IC = 12 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= 13 Adc, IB = 2. 0 Adc)
Base-Emitter On Voltage
(IC = 5. a Adc, VCE = 12 V:dc)
2N2075 thru 2N2078
2N2079 thru 2N2082
2N2075 thru 2N2078
2N2079 thru 2N2082
2N2075 thru 2N2078
2N2079 thru 2N2082
2N2075 thru 2N2078
2N2079 thru 2N2082
2N2075 & 76, 2N2079 & 80
2N2077 & 78, 2N2081 & 82
hFE
VCE(sat)
VBE(on)
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency
(IC =5.0Adc, VCE =6.0Vdc)
Rise Time
(V CE = 12 Vdc, IC(on) = 12 Adc, IB .= 2. a Adc)
Fall Time
(VBE = 6. a Vdc, IC(off) = 0, RBE = 10 ohms)
2N2075 thru 2N2078
2N2079 thru 2N2082
2N2075 thru 2N2078
2N2079 thru 2N2082
f Ole
tr
tf
*To avoid excessive heating of collector junction, perform this test with a sweep method.
Min I Max I Unit
Vdc
25 -
45 -
55 -
65 -
Vdc
40 -
50 -
70
80
--
Vdc
- 1.0
- 1.0
- 1.0
- 1.0
mAdc
- 0.2
- 4.0
- 15
mAde
- 4.0
- 15
25 100
40 160
20 40
35 70
15 -
25 -
8-
12 -
-
Vdc
- 0.7
- 0.9
Vdc
- 0.9
I5. a -
Typ
9.0
6.0
12
13
kHz
jJ.s
jJ.s
2-240


Part Number 2N2076
Description PNP germanium power transistors
Maker Motorola
Total Page 4 Pages
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