900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

2N2218 Datasheet

NPN Transistor

No Preview Available !

2N2218I A, 2N2219I A 2N2221 I A{sILiCON)
2N2222,A, 2N5581 , 2N5582
NPN SILICON ANNULAR HERMETIC TRANSISTORS
. . . widely used "Industry Standard" transistors for applications
as medium-speed switches and as amplifiers from audio to VHF
frequencies.
• DC Current Gain Specified - 1.0 to 500 mAdc
• Low Collector-Emitter Saturation Voltage -
VCE(sat) @ IC = 500 mAdc
= 1.6 Vdc (Max) - Non-A Suffix
= 1.0 Vdc (Max) - A-Suffix
• High Current-Gain-Bandwidth Product -
fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except
= 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A,
2N5582
• Complements to PNP 2N2904,A thru 2N2907,A
• JAN/JANTX Available for all devices
NPN SILICON
SWITCHING AND AMPLIFIER
TRANSISTORS
CASE 31 (1)
TO·5
2N221B,A
2N2219.A
SELECTION 3UIDE
Device
Type
2N2218
2N2219
2N2221
2N2222
2N5581
2N5582
2N2218A
2N2219A
2N2221A
2N2222A
BVeEO
le= 10mAdc
Volts
30
30
40
40
40
Characteristic
hFE
Ie =150mAdc Ie = 500 mAdc
MinIMax
Min
40/120
100/300
40/120
100/300
20
30
20
30
40/120
100/300
25
40
40/120
1001300
40/120
100/300
25
40
25
40
Package
TO-5
TO-18
TO-46
TO-5
TO-18
*MAXIMUM RATINGS
Rating
Coliector·Emitter Voltage
Coliector·Base Voltage
Emitter·Base Voltage
Collector Current - Continuous
Total Device Dissipation @TA =25°C
Derate above 2SoC
Total Device Dissipation @TC= 2SoC
Derate above 250 e
Operating and Storage Junction
Temperature Range
Symbol
VeEO
Vea
VEa
Ie
2N2218 2N2218A
2N2219 2N2219A 2N5581
2N2221 2N2221A 2N5582
2N2222 2N2222A
30 40 40
60 75 75
5.0 6.0 6.0
BOO BOO BOO"
Unit
Vde
Vde
Vde
mAde
2N221~:~ 2N2221 ,A 2N5581
2N2219, 2N2222,A 2N5582
Po 0.8
5.33
0.5
3.33
0.5
3.33
Po 3.0
20
1.8 2.0
12 11.43
TJ,Tstg - - 6 5 to +200-
Watt
mwfle
Watts
mwfle
°e
-Indicates JEaEC Registered Data.
··Motorola Guarantees this Data in Addition to JEOEC Registered Data.
rl rDn.2a"
ro.17B
DlA
DlA1I ~m.
j iom
o.soo
O.!!.!§
O.019 D1A
1111. EmlulIl
2 ,~
MIN
~
3.Coliector
Weight ~ 1.1Sgr.m
/!
CASE 22(1)
TO·1B
2N2221,A
2N2222.A
0.100
'. Lr"
ICASE 26
T0-46
-I
D500
1_MIN
'~
DDB'
!:ill.
0019'"
2N55B1
2N55B2
The respective JEOEC registered
dimensions and notes apply
2-255


Motorola Electronic Components Datasheet

2N2218 Datasheet

NPN Transistor

No Preview Available !

2N2218,A, 2N2219,A, 2N2221 ,A, 2N2222,A, 2N5581 ,2N5582 (continued)
*ELECTRICAL CHARACTERISTICS ITA =.250 C unless otherwise noted)
I Characteristic
OFF CHARACTERISTICS
Collector~Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
Non-A Suffix
A-Suffix,2N5581,2N5582
Collector-Base Breakdown Voltage
(lC = 10 "Ade, IE = 0)
Non-A Suffix
A-Suffix, 2N5581,2N5582
Emitter-Base Breakdown Voltage
(IE = 10 "Ade, IC = 0)
Non-A Suffix
A-Suffix,2N5581,2N5582
Collector Cutoff Current
(VCE =60 Vde, VEB(off) = 3.0 Vde)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, T A = 150oC)
(VCB =60Vde,IE =0, TA = 150oC)
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
Base Cutoff Cu rrent
(VCE = 60 Vde, VEB(off) = 3.0 Vde)
A-Suffix, 2N5581 ,2N5582
Non-A Suffix
A-Suffix,2N5581,2N5582
Non-A Suffix
A-Suffix, 2N5581 ,2N5582
A-Suffix, 2N5581 ,2N5582
A-Suffix
Symbol
BVCEO
BVCBO
BVEBO
ICEX
ICBO
lEBO
IBL
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde, TA = -550 C)
(lC = 150 mAde, VCE = 10 Vde)(l)
(lC= 150 mAde, VCE = 1.0Vde)(1)
(lC = 500 mAde, VCE = 10 Vde)(l)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(I C = 500 mAde, I B = 50 mAde)
Base-Emitter Saturation Voltage( 1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
2N2218,A,2N 2221 ,A,2N5581 (1)
2N2219,A,2N2222,A,2N5582( 1)
2N2218,A,2N2221,A,2N5581
2N2219.A,2N 2222,A,2N5582
2N2218,A,2N2221,A,2N5581 (1)
2N2219,A,2N2222,A,2N5582(1 )
2N2218A,2N2221A,2N5581
2N2219A,2N 2222A,2N5582
2N2218,A,2N2221,A,2N5581
2N2219,A,2N2222,A,2N5582
2N 2218A,2N 2221 A,2N 5581
2N2219A,2N2222A,2N5582
2N2218,2N2221
2N2219,2N2222
2N2218A,2N2221A,2N5581
2N2219A,2N2222A,2N5582
Non-A Suffix
A-Suffix, 2N5581,2N5582
Non-A Suffix
A-Suffix, 2N5581 ,2N5582
Non-A Suffix
A-Suffix, 2N5581 ,2N5582
Non-A Suffix
A-5uffix, 2N5581 ,2N5582
hFE
VCE(sat)
VBE(sat)
Min
30
40
60
75
5.0
6_0
-
-
-
-
-
-
-
20
35
25
50
35
75
15
35
40
100
20
50
20
30
25
40
-
-
-
-
0.6
0.6
-
-
Max
-
-
-
-
-
-
10
0.01
0.Q1
10
10
10
20
-
-
-
-
-
-
-
-
120
300
-
-
-
-
-
-
0.4
0.3
1.6
1.0
2.0
1.2
2.6
2.0
Unit
Vde
Vde
Vde
nAde
"Ade
nAde
nAde
-
Vde
Vde
2-256


Part Number 2N2218
Description NPN Transistor
Maker Motorola
PDF Download

2N2218 Datasheet PDF






Similar Datasheet

1 2N2212 PNP GERMANIUM POWER TRANSISTORS
Motorola
2 2N2217 Trans GP BJT NPN 30V 0.8A 3-Pin TO-5
New Jersey Semiconductor
3 2N2218 SILICON NPN TRANSISTOR
Central Semiconductor
4 2N2218 NPN SILICON PLANAR SWITCHING TRANSISTORS
CDIL
5 2N2218 NPN-SWITCHIN SILICON TRANSISTOR
Microsemi
6 2N2218 NPN Transistor
Motorola
7 2N2218 NPN Switching Silicon Transistor
MA-COM
8 2N2218 Silicon Planar Epitaxial NPN transistor
STMicroelectronics
9 2N2218 Bipolar NPN Device
Seme LAB





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy