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Motorola Electronic Components Datasheet

2N2527 Datasheet

PNIP germanium power transistors

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2N2526 (GERMANIUM) PNIP germanium power transistors for high-voltage
2N2527
power switching applications.
2N2528.
~ CASE 11A
. ~ (TO-3modified)
~ CASE 4--04
~
(TO-41).
MAXIMUM RATINGS
Rating
For units with solder lugs attached. specify
devices MP2526 etc. (T0-41 package)
Symbol 2N2526 2N2527 2N2528 Unit
Collector-Emitter Voltage
VCE
80
120 160 Vdc
Collector-Base
Emitter-Base VoUage
VCB
VEB
80
120 160 Vdc
5.0 Vdc
Collector Current - Continuous
Base Current
Emitter Reverse Current
(Surge 60 Hz Recurrent)
Total Device Dissipation @ TC = 25°C
IC
IB
IE
PD
10 Adc
5.0 Adc
1.5 Adc
85 Watts
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
TJ , Tstg
-65 to +110
Symbol
Max
°c
Unit
Thermal Resistance, Junction to Case
eJC 1.0 °cjw
POWER·TEMPERATURE DERATING CURVE
The maximum continuous power is related to
maximum junction temperature by the thermal
resistance factor. This curve has a va~ue of 85
watts at a case temperature of 2S"C and is 0
watts at HO"C with a linear relation between
the two temperatures such that:
= 110· - Tc
Allowable PD
1.0 Watts
oz: 100
~ 80
I i_ :~
...a: 20
~0
p.. 0
85 WATTS MAXIMUM
..............
l~
I'-.. ....... ~.20~C
25 50 75 100
Tc. CASE TEMPERATURE (OC)
125
..10
Sm. 1m. 500.. ~
0
100. .
~5 OR lESS
,4
3
r--...2
~ ~1
.......
\
I\.
.'\
I'\. ,\.'l\
T r-.
..54f-- ~d'
.3
"-.2
8S-WAn
POWER DISSIPATION AT
25°C CASE TEMPERATURE
"-.1
",
0
0
5
4
!3
2
I1
~ o.5
~ g..43
u 0.2
.1
SAFE OPERATING AREAS
2N2527
5.1. 1~' sdo,..' 12S0~' I
,I'
I"
i\
F F50p.s __::
ORLes;'= t-t-
r-. ~~1
r-.,:::: ,,~
IS-WATT
POWER DISSIPATION AT
i'
250 & CASE TEMPERATURt.
"
.OS
.04
.03
.02
.01o ~ ~ ~ ~ ~ H ro 10 ~
COLLtCTOll.£MlmR VOlTAGE MIlTS)
.OS de
.04
.03
.02
\
1
.0 0
10
20
30 ~
SO
H
ro 80
~ 100 110120130
COliECTOll.£MmER VOlTAGE ('101TSI
....20
5...
0
5
1m. 500.. 1 ~
~
OR
lESS
1E=1E=
~4
3
2
1
M. I..:l.
I\.' L"- ~II..\
.........t:"h ~
.5
.4
'~.3
2
L
15-WATI
.1 E~!ll~2~rfr~~~rJRE
de
.os
.D4
.03
.02
,~
.01o ao ~ 10 10 100 120 l~ 1H lID
COLlECTOR-EMInER VOLT_ tyOLTS)
The Safe Operating Area Curves indicate Ic-
VCE limits below which the device will not go into
secondary breakdown. Collector load lines for spe-
cific circuits must fall within the applicable Safe
Area to avoid causing a collector-emitter short.
(Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation
below the maximum Tl, the power-temperature
derating curve must be observed for both steady
state and pulse P9wer conditions.
2-312


Motorola Electronic Components Datasheet

2N2527 Datasheet

PNIP germanium power transistors

No Preview Available !

2N2526 thru 2N2528 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage*
(IC = 100 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IC = 0)
Collector Cutoff Current*
(VCE = 80 Vdc, VBE (off) = O. 2 Vdc, T C = 100° C)
(VCE = 120 Vdc, VBE (off) = O. 2 Vdc, T C = 100' C)
(VCE = 160 Vdc, VBE(off) = 0.2 Vdc, TC = 100C C)
Collector-Emitter Cutoff Current
(VCE = 80 Vdc, RBE = 100 ohms)
(VCE = 120 Vdc, RBE = 100 ohms)
(VCE = 160 Vdc, RBE = 100 ohms)
2N2526
2N2527
2N2528
2N2526
2N2527
2N2528
2N2526
2N2527
2N2528
Symbol Min
BV CEO(sus)•
BVEBO
ICEX
80
120
160
5,0
-
-
-
ICER
-
-
-
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
(VCB = 2.0 Vdc, IE = 0)
2N2526
2N2527
2N2528
ICBO
-
-
-
-
Typ IMax I Unit
Volts
--
--
--
Vdc
--
mAdc
- 35
- 35
- 35
mAdc
- 25
- 25
- 25
mAdc
- 3.0
- 3.0
- 3.0
- 150 IlAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 Adc, VCE = 2.0 Vdc)
DC Transconductance
(IC = 3.0 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 Adc, IB = 1. 0 Adc)
Base-Emitter Saturation Voltage
(IC = 10 Adc, IB = 1. 0 Adc)
hFE
gFE
VCE(sat)
VBE(sat)
20 - 50
-
4.0 6.0 -
mhos
Vdc
- O. 5 0.8
Vdc
- 0.8 1.2
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(IC = O. 5 Adc, VCE = 12 Vdc, f = 30 kHz)
Rise Time
Storage Time
Fall Time
hfe
10 15 -
-
tr
- 5. 5 -
IlS
ts
- 1.2 -
IlS
tf
- 2.0 -
Ils
*To avoid excessive heating of collector junction, perform this test with a sweep method.
TYPlCAL INPUT CHARACTERISTICS
COLLECTOR CURRENT ,ersus BASE CURIIENT
ALL TYPES
COLLECTOR CURRENT ,ersus DRIVE VOLTAGE
IOr---~---r---r---'----'---'---,
IOr-----r----r----rr--,-,-~_,r_--·
100 200 300 400 soo 600 700
I" BASE CURRENT (mAl
i8
r!
e4 1-----t-----I7''I--t----+----I----;
~
.2 2 ~---+-_++.I----+----+---___1f----1
oL....""....:;_......I_ _-'-_-.L_ _....._~
o 0.5 1.0
V", BASE·EMITTER VOLTAGE (VOLTSI
1.5
2-313


Part Number 2N2527
Description PNIP germanium power transistors
Maker Motorola
Total Page 3 Pages
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