2N2895 Description
Tstg 1.8 10.3 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage!
| Part number | 2N2895 |
|---|---|
| Download | 2N2895 Datasheet (PDF) |
| File Size | 48.86 KB |
| Manufacturer | Motorola Semiconductor |
| Description | GENERAL PURPOSE TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N2895 | Bipolar NPN Device |
| Solid State Solid State |
2N2895 | NPN Silicon Transistor |
| 2N2895 | SILICON NPN TRANSISTORS |
Tstg 1.8 10.3 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage!