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2N3015 NPN Transistor

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Description

2N3013 2N3014 For Specifications, See 2N3009 Data.2N3015 (SILICON) NPN silicon annular transistor designed for highspeed, medium-power saturated s.

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Datasheet Specifications

Part number
2N3015
Manufacturer
Motorola
File Size
102.02 KB
Datasheet
2N3015-Motorola.pdf
Description
NPN Transistor

Applications

* CASE 31 (T0
* 5) Collector connected to case MAXI MUM RATI NGS ITA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage
* Collector-Base Voltage Emitter-Base Voltage Total Device DisSipation @ TA ~ 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above

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